Effect of the oxygen flow on the properties of ITO thin films deposited by ion beam assisted deposition (IBAD)
Identifieur interne : 001182 ( Chine/Analysis ); précédent : 001181; suivant : 001183Effect of the oxygen flow on the properties of ITO thin films deposited by ion beam assisted deposition (IBAD)
Auteurs : RBID : Pascal:08-0407032Descripteurs français
- Pascal (Inist)
- Couche mince, Méthode IBAD, Diffraction RX, Microscopie force atomique, Propriété optique, Transmission optique, Spectre absorption, Constante optique, Indice réfraction, Epaisseur couche, Facteur transmission, Propriété électrique, Effet Hall, Oxyde d'étain, Oxyde d'indium, Résistivité électrique, Spectre IR, Substrat verre, 8115J, 6855J, 7866, 7820C.
English descriptors
- KwdEn :
- Absorption spectra, Atomic force microscopy, Electric resistivity, Electrical properties, Hall effect, Indium oxide, Infrared spectra, Ion beam assisted deposition method, Layer thickness, Optical constants, Optical properties, Optical transmission, Refractive index, Thin films, Tin oxide, Transmittance, XRD.
Abstract
ITO films were deposited onto glass substrates by ion beam assisted deposition method. The oxygen ions were produced using a Kaufinan ion source. The oxygen flow was varied from 20 until 60 sccm and the effect of the oxygen flow on properties of ITO films has been studied. The structural properties of the film were characterized by X-ray diffraction and atomic force microscopy. The optical properties were characterized by optical transmission measurements and the optical constants (refractive index n and extinction coefficient k) and film thickness have been obtained by fitting the transmittance using a semi-quantum model. The electrical properties were characterized by Hall effect measurements. It has been found that the ITO film with low electrical resistivity and high transmittance can be obtained with 40 seem oxygen flow (the working pressure is about 2.3 x10-2 Pa at this oxygen flow).
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Pascal:08-0407032Le document en format XML
<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Effect of the oxygen flow on the properties of ITO thin films deposited by ion beam assisted deposition (IBAD)</title><author><name sortKey="Meng, Li Jian" uniqKey="Meng L">Li-Jian Meng</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Departamento de Física, Instituto Superior de Engenharia do Porto, Rua Dr. António Bernardino de Almeida, 431</s1><s2>4200-072 Porto</s2><s3>PRT</s3><sZ>1 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country>Portugal</country><wicri:noRegion>4200-072 Porto</wicri:noRegion></affiliation><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Centro de Física, Universidade do Minho</s1><s2>4700 Braga</s2><s3>PRT</s3><sZ>1 aut.</sZ></inist:fA14><country>Portugal</country><wicri:noRegion>4700 Braga</wicri:noRegion></affiliation></author><author><name>JINSONG GAO</name><affiliation wicri:level="1"><inist:fA14 i1="03"><s1>Center of Optical Technology, Changchun Institute of Optics, fine Mechanics and Physics of Chinese Academy of Science, PO Box 1024, 16# East Nanhu Road</s1><s2>Changchun 130033</s2><s3>CHN</s3><sZ>2 aut.</sZ></inist:fA14><country>République populaire de Chine</country><placeName><settlement type="city">Changchun</settlement><region type="province">Jilin</region><region type="groupement">Dongbei</region></placeName></affiliation></author><author><name sortKey="Silva, R A" uniqKey="Silva R">R. A. Silva</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Departamento de Física, Instituto Superior de Engenharia do Porto, Rua Dr. António Bernardino de Almeida, 431</s1><s2>4200-072 Porto</s2><s3>PRT</s3><sZ>1 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country>Portugal</country><wicri:noRegion>4200-072 Porto</wicri:noRegion></affiliation></author><author><name>SHIGENG SONG</name><affiliation wicri:level="1"><inist:fA14 i1="04"><s1>Thin Film Centre, University of Paisley, High St</s1><s2>Paisley, PA1 2BE, Scotland</s2><s3>GBR</s3><sZ>4 aut.</sZ></inist:fA14><country>Royaume-Uni</country><wicri:noRegion>Paisley, PA1 2BE, Scotland</wicri:noRegion></affiliation></author></titleStmt><publicationStmt><idno type="inist">08-0407032</idno><date when="2008">2008</date><idno type="stanalyst">PASCAL 08-0407032 INIST</idno><idno type="RBID">Pascal:08-0407032</idno><idno type="wicri:Area/Main/Corpus">006520</idno><idno type="wicri:Area/Main/Repository">006931</idno><idno type="wicri:Area/Chine/Extraction">001182</idno></publicationStmt><seriesStmt><idno type="ISSN">0040-6090</idno><title level="j" type="abbreviated">Thin solid films</title><title level="j" type="main">Thin solid films</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Absorption spectra</term><term>Atomic force microscopy</term><term>Electric resistivity</term><term>Electrical properties</term><term>Hall effect</term><term>Indium oxide</term><term>Infrared spectra</term><term>Ion beam assisted deposition method</term><term>Layer thickness</term><term>Optical constants</term><term>Optical properties</term><term>Optical transmission</term><term>Refractive index</term><term>Thin films</term><term>Tin oxide</term><term>Transmittance</term><term>XRD</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Couche mince</term><term>Méthode IBAD</term><term>Diffraction RX</term><term>Microscopie force atomique</term><term>Propriété optique</term><term>Transmission optique</term><term>Spectre absorption</term><term>Constante optique</term><term>Indice réfraction</term><term>Epaisseur couche</term><term>Facteur transmission</term><term>Propriété électrique</term><term>Effet Hall</term><term>Oxyde d'étain</term><term>Oxyde d'indium</term><term>Résistivité électrique</term><term>Spectre IR</term><term>Substrat verre</term><term>8115J</term><term>6855J</term><term>7866</term><term>7820C</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">ITO films were deposited onto glass substrates by ion beam assisted deposition method. The oxygen ions were produced using a Kaufinan ion source. The oxygen flow was varied from 20 until 60 sccm and the effect of the oxygen flow on properties of ITO films has been studied. The structural properties of the film were characterized by X-ray diffraction and atomic force microscopy. The optical properties were characterized by optical transmission measurements and the optical constants (refractive index n and extinction coefficient k) and film thickness have been obtained by fitting the transmittance using a semi-quantum model. The electrical properties were characterized by Hall effect measurements. It has been found that the ITO film with low electrical resistivity and high transmittance can be obtained with 40 seem oxygen flow (the working pressure is about 2.3 x10<sup>-2</sup> Pa at this oxygen flow).</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0040-6090</s0></fA01><fA02 i1="01"><s0>THSFAP</s0></fA02><fA03 i2="1"><s0>Thin solid films</s0></fA03><fA05><s2>516</s2></fA05><fA06><s2>16</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Effect of the oxygen flow on the properties of ITO thin films deposited by ion beam assisted deposition (IBAD)</s1></fA08><fA09 i1="01" i2="1" l="ENG"><s1>Thin Films 2006, Singapore</s1></fA09><fA11 i1="01" i2="1"><s1>MENG (Li-Jian)</s1></fA11><fA11 i1="02" i2="1"><s1>JINSONG GAO</s1></fA11><fA11 i1="03" i2="1"><s1>SILVA (R. A.)</s1></fA11><fA11 i1="04" i2="1"><s1>SHIGENG SONG</s1></fA11><fA12 i1="01" i2="1"><s1>ZHANG (Sam)</s1><s9>ed.</s9></fA12><fA14 i1="01"><s1>Departamento de Física, Instituto Superior de Engenharia do Porto, Rua Dr. António Bernardino de Almeida, 431</s1><s2>4200-072 Porto</s2><s3>PRT</s3><sZ>1 aut.</sZ><sZ>3 aut.</sZ></fA14><fA14 i1="02"><s1>Centro de Física, Universidade do Minho</s1><s2>4700 Braga</s2><s3>PRT</s3><sZ>1 aut.</sZ></fA14><fA14 i1="03"><s1>Center of Optical Technology, Changchun Institute of Optics, fine Mechanics and Physics of Chinese Academy of Science, PO Box 1024, 16# East Nanhu Road</s1><s2>Changchun 130033</s2><s3>CHN</s3><sZ>2 aut.</sZ></fA14><fA14 i1="04"><s1>Thin Film Centre, University of Paisley, High St</s1><s2>Paisley, PA1 2BE, Scotland</s2><s3>GBR</s3><sZ>4 aut.</sZ></fA14><fA15 i1="01"><s1>School of Mechanical and Aerospace Engineering, Nanyang Technological University, 50 Nanyang Avenue</s1><s2>639798, Singapore</s2><s3>SGP</s3><sZ>1 aut.</sZ></fA15><fA20><s1>5454-5459</s1></fA20><fA21><s1>2008</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>13597</s2><s5>354000161781060610</s5></fA43><fA44><s0>0000</s0><s1>© 2008 INIST-CNRS. 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